XP0111M Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Composite Transistors
P_T — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP0111M
I_C — V_CE
240
Ta=25˚C
200
IB= –1.0mA
– 0.9mA
– 0.8mA
160
– 0.7mA
– 0.6mA
120
80
– 0.5mA
– 0.4mA
– 0.3mA
40
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 0.03
– 0.01
– 25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
h_FE — I_C
500
VCE= –10V
400
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
C_ob — V_CB
10
f=1MHz
IE=0
Ta=25˚C
8
6
4
2
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
I_O — V_IN
10^–4
VO= – 5V
Ta=25˚C
10^–3
10^–2
10^–1
1
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Input voltage VIN (V)
–100
– 30
–10
V_IN — I_O
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
2