XN6534 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I_C — V_CE
12
Ta=25˚C
IB=100µA
10
80µA
8
60µA
6
40µA
4
20µA
2
0
0
4
8
12
16
Collector to emitter voltage VCE (V)
I_C — V_BE
30
VCE=6V
25
25˚C
Ta=75˚C –25˚C
20
15
10
5
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
0.1
Ta=75˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
1200
1000
f_T — I_E
VCB=6V
Ta=25˚C
800
600
400
200
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
Z_rb — I_E
120
VCB=6V
f=2MHz
Ta=25˚C
100
80
60
40
20
0
–0.1 –0.3
–1
–3
–10
Emitter current IE (mA)
XN6534
I_C — I_B
12
VCE=6V
Ta=25˚C
10
8
6
4
2
0
0
40
80
120 160
Base current IB (µA)
h_FE — I_C
360
VCE=6V
300
240
Ta=75˚C
180
25˚C
120
– 25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
C_re — V_CE
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
2