XN4683 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Feedback capacitance
Transition frequency
Noise figure
Power gain
Symbol
V_CBO
V_EBO
h_FE1
V_BE
Cre
f_T
NF
PG
Conditions
min
I_C = 10µA, I_E = 0
30
I_E = 10µA, I_C = 0
3
V_CE = 6V, I_C = –1mA
40
V_CB = 6V, I_E = –1mA
V_CB = 6V, I_E = –1mA, f = 10.7MHz
V_CB = 6V, I_E = –1mA, f = 200MHz 450
V_CB = 6V, I_E = –1mA, f = 100MHz
V_CB = 6V, I_E = –1mA, f = 100MHz
XN4683
typ max Unit
V
V
260
720
mV
0.8
1
pF
650
MHz
3.3
dB
24
dB
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
Conditions
min
I_C = –10µA, I_E = 0
–60
I_C = –2mA, I_B = 0
–50
I_E = –10µA, I_C = 0
–7
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
V_CE = –10V, I_C = –2mA
160
I_C = –100mA, I_B = –10mA
V_CB = –10V, I_E = 1mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
2