XN4608 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
C_ob
Conditions
min
I_C = 10µA, I_E = 0
60
I_C = 2mA, I_B = 0
50
I_E = 10µA, I_C = 0
7
V_CB = 20V, I_E = 0
V_CE = 10V, I_B = 0
V_CE = 10V, I_C = 2mA
160
I_C = 100mA, I_B = 10mA
V_CB = 10V, I_E = –2mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
XN4608
typ max Unit
V
V
V
0.1
µA
100
µA
460
0.1
0.3
V
150
MHz
3.5
pF
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
min
I_C = –10µA, I_E = 0
–15
I_C = –1mA, I_B = 0
–10
I_E = –10µA, I_C = 0
–7
V_CB = –10V, I_E = 0
V_CE = –2V, I_C = –0.5A*
100
V_CE = –2V, I_C = –1A*
60
I_C = –0.4A, I_B = –8mA
I_C = –0.4A, I_B = –8mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
typ max Unit
V
V
V
– 0.1 µA
350
– 0.16 – 0.3
V
– 0.8 –1.2
V
130
MHz
22
pF
* Pulse measurement
Common characteristics chart
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
2