XN4604 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

XN04604
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
25
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*1
V_EBO
I_CBO
h_FE1
I_E = 10 µA, I_C = 0
V_CB = 25 V, I_E = 0
V_CE = 2 V, I_C = 0.5 A
12
V
0.1 µA
200
800

h_FE2 V_CE = 2 V, I_C = 1 A
60
Collector-emitter saturation voltage ^*1 V_CE(sat) I_C = 0.5 A, I_B = 20 mA
Base-emitter saturation voltage ^*1
V_BE(sat) I_C = 0.5 A, I_B = 20 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
0.13 0.40
1.2
200
10
V
V
MHz
pF
ON resistance ^*2
R_on
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
1 kΩ
*2: ^Ron ^{test circuit}
I_B = 1 mA
f = 1 kHz
V = 0.3 V
V_B V_V V_A
• Tr2
R_on =
V_B ×
V_A
1 000
− V_B
(Ω)
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C = −10 µA, I_E = 0
−15
I_C = −1 mA, I_B = 0
−10
I_E = −10 µA, I_C = 0
−7
V_CB = −10 V, I_E = 0
V_CE = −2 V, I_C = − 0.5 A
100
V_CE = −2 V, I_C = −1 A
60
I_C = − 0.4 A, I_B = −8 mA
I_C = − 0.4 A, I_B = −8 mA
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
− 0.1
350
− 0.16 − 0.30
− 0.8 −1.2
130
22
Unit
V
V
V
µA

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Pulse measurement
2
SJJ00084BED