XN4502 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I_C — V_CE
800
Ta=25˚C
700
IB=10mA
9mA
600
8mA
7mA
6mA
500
5mA
4mA
400
3mA
300
2mA
200
1mA
100
0
0
4
8
12 16 20
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
– 25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
V_BE(sat) — I_C
100
IC/IB=10
30
10
3
25˚C
1
Ta= – 25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
f_T — I_E
240
VCB=10V
Ta=25˚C
200
160
120
80
40
0
–1 –2 –3 –5 –10 –20 –30 –50 –100
Emitter current IE (mA)
C_ob — V_CB
12
f=1MHz
IE=0
Ta=25˚C
10
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
XN4502
I_C — I_B
800
VCE=10V
Ta=25˚C
700
600
500
400
300
200
100
0
0
2
4
6
8
10
Base current IB (mA)
h_FE — I_C
300
VCE=10V
250
Ta=75˚C
200
25˚C
150
– 25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
V_CER — R_BE
120
IC=2mA
Ta=25˚C
100
80
60
40
20
0
1 3 10 30 100 300 1000
Base to emitter resistance RBE (kΩ)
2