XN4402 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

XN04402
P_T  T_a
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature T_a (°C)
−800
−700
−600
−500
−400
−300
−200
I_C  V_CE
Ta = 25°C
IB
=
−10
mA
−9
mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
−100
0
0
−4 −8 −12 −16 −20
Collector-emitter voltage V_CE (V)
−800
−700
−600
−500
−400
−300
−200
−100
0
0
I_C  I_B
VCE = −10 V
Ta = 25°C
−2 −4 −6 −8 −10
Base current I_B (mA)
−10
−1
−10^−1
−10^−2
V_CE(sat)  I_C
I_C / I_B = 10
T_a = 75°C
25°C
−25°C
−10²
−10
−1
−10^−1
V_BE(sat)  I_C
I_C / I_B = 10
T_a = −25°C
25°C
75°C
−10^−3
−1
−10
−10²
−10³
Collector current I_C (mA)
−10^−2
−1
−10
−10²
−10³
Collector current I_C (mA)
h_FE  I_C
300
VCE = −10 V
250
200
Ta = 75°C
25°C
150
−25°C
100
50
0
−1
−10
−10²
−10³
Collector current I_C (mA)
f_T  I_E
240
VCB = −10 V
Ta = 25°C
200
160
120
80
40
0
1
10
10²
Emitter current I_E (mA)
C_ob  V_CB
24
f = 1 MHz
IE = 0
20
Ta = 25°C
16
12
8
4
0
−1
−10
−10²
Collector-base voltage V_CB (V)
V_CER  R_BE
−120
I_C = −2 mA
Ta = 25°C
−100
−80
−60
−40
−20
0
1
10
10²
10³
Base-emitter resistance R_BE (kΩ)
2
SJJ00072BED