XN4322 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors
s ^{Electrical Characteristics (Ta=25˚C)}
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
f_T
R₁
R₁/R₂
Conditions
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
V_CE = 10V, I_C = 100mA
I_C = 100mA, I_B = 5mA
V_CC = 5V, V_B = 0.5V, R_L = 500Ω
V_CC = 5V, V_B = 3.5V, R_L = 500Ω
V_CB = 10V, I_E = –50mA, f = 200MHz
min
50
50
50
4.9
–30%
0.8
XN4322
typ max Unit
V
V
1
µA
1
µA
2
mA
0.25
V
V
0.2
V
200
MHz
4.7 +30% kΩ
1.0
1.2
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
f_T
R₁
R₁/R₂
Conditions
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
V_CB = –50V, I_E = 0
V_CE = –50V, I_B = 0
V_EB = –6V, I_C = 0
V_CE = –10V, I_C = –100mA
I_C = –100mA, I_B = – 5mA
V_CC = –5V, V_B = –0.5V, R_L = 500Ω
V_CC = –5V, V_B = –2.5V, R_L = 500Ω
V_CB = –10V, I_E = 50mA, f = 200MHz
min
–50
–50
50
–4.9
–30%
0.8
typ max Unit
V
V
–1
µA
–1
µA
–2
mA
– 0.25 V
V
– 0.2
V
200
MHz
4.7 +30% kΩ
1.0
1.2
2