|
XN4312 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Silicon NPN(PNP) epitaxial planer transistor | |||
|
◁ |
XN04312
â Electrical Characteristics Ta = 25°C ± 3°C
⢠Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
60

Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high-level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kâ¦
4.9
V
Output voltage low-level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kâ¦
0.2
V
Input resistance
R1
â30% 22 +30% kâ¦
Resistance ratio
R1 / R2
0.8 1.0 1.2

Transition frequency
fT
VCB = 10 V, IE = â2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
⢠Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = â10 µA, IE = 0
â50
V
Collector-emitter voltage (Base open) VCEO IC = â2 mA, IB = 0
â50
V
Collector-base cutoff current (Emitter open) ICBO VCB = â50 V, IE = 0
â 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = â50 V, IB = 0
â 0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = â6 V, IC = 0
â 0.2 mA
Forward current transfer ratio
hFE VCE = â10 V, IC = â5 mA
60

Collector-emitter saturation voltage
VCE(sat) IC = â10 mA, IB = â 0.3 mA
â 0.25 V
Output voltage high-level
VOH VCC = â5 V, VB = â 0.5 V, RL = 1 k⦠â4.9
V
Output voltage low-level
VOL VCC = â5 V, VB = â2.5 V, RL = 1 kâ¦
â 0.2 V
Input resistance
R1
â30% 22 +30% kâ¦
Resistance ratio
R1 / R2
0.8 1.0 1.2

Transition frequency
fT
VCB = â10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00062BED
|
▷ |