XN421N Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
XN421N
I_C — V_CE
160
Ta=25˚C
140
IB=1.0mA
120
0.9mA
0.8mA
0.7mA
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
10
IC/IB=10
1
0.1
Ta=75˚C
25˚C
– 25˚C
0.01
1
10
100
1000
Collector current IC (mA)
h_FE — I_C
480
VCE=10V
400
Ta=75˚C
320
25˚C
240
– 25˚C
160
80
0
1
10
100
1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
10
100
Collector to base voltage VCB (V)
10000
1000
I_O — V_IN
VO=5V
Ta=25˚C
100
10
1
0.4 0.6 0.8
1
1.2 1.4
Input voltage VIN (V)
V_IN — I_O
100
VO=0.2V
Ta=25˚C
10
1
0.1
0.01
0.1
1
10
100
Output current IO (mA)
2