XN421L Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
XN421L
I_C — V_CE
240
Ta=25˚C
200
160
IB=1.0mA
120
0.8mA
0.6mA
80
0.4mA
40
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
– 25˚C
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
h_FE — I_C
240
VCE=10V
200
160
Ta=75˚C
120
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
I_O — V_IN
100
VO=0.2V
Ta=25˚C
10
1
0.1
0.01
0.1 0.3 1 3 10 30 100
Output current IO (mA)
2