XN4213 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
XN4213
I_C — V_CE
160
Ta=25˚C
140
IB=1.0mA _0.9mA
0.8mA
0.7mA
120
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
h_FE — I_C
400
VCE=10V
350
300
Ta=75˚C
250
25˚C
– 25˚C
200
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
I_O — V_IN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
V_IN — I_O
100
VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Output current IO (mA)
2