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XN2531 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor | |||
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Composite Transistors
PT â Ta
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (ËC)
IC â VCE
80
Ta=25ËC
60
IB=500µA
40
400µA
300µA
200µA
20
100µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
XN2531
IC â VBE
60
25ËC
VCE=4V
50
Ta=75ËC â25ËC
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) â IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75ËC
0.1
25ËC
0.03
â 25ËC
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE â IC
360
VCE=4V
300
Ta=75ËC
240
25ËC
180
120
â 25ËC
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
fT â IE
4.0
VCB=4V
Ta=25ËC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
â0.1 â0.3 â1 â3 â10 â30 â100
Emitter current IE (mA)
Cob â VCB
1.6
f=1MHz
1.4
IE=0
Ta=25ËC
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
Collector to base voltage VCB (V)
2
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