XN1D873 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon N-channel junction FET

Composite Transistors
P_T — Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
| Y_fs | — V_GS
5
VDS=10V
Ta=25˚C
4
3
IDSS=10mA
2
1
0
–1.6
–1.2
– 0.8
– 0.4
0
Gate to source voltage VGS (V)
I_D — V_DS
2.5
Ta=25˚C
2.0
VGS=0V
1.5
– 0.1V
– 0.2V
1.0
– 0.3V
– 0.4V
0.5
0
0123456
Drain to source voltage VDS (V)
| Y_fs | — I_D
2.5
VDS=10V
Ta=25˚C
2.0
IDSS=10mA
1.5
1.0
0.5
0
0
2
4
6
8
Drain current ID (mA)
XN1D873
I_D — V_GS
2.5
2.0
Ta=–25˚C
1.5
25˚C
1.0
75˚C
0.5
0
–1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0
Gate to source voltage VGS (V)
C_iss, C_rss, C_oss — V_DS
10
VGS=0
f=1MHz
Ta=25˚C
8
6
Ciss
4
2
Coss
Crss
0
1
10
100
Drain to source voltage VDS (V)
2