XN1509 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Composite Transistors
P_T — Ta
240
200
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
IC/IB=10
30
10
3
1
0.3
0.1
25˚C ^Ta=75˚C
– 25˚C
0.03
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
C_ob — V_CB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
I_C — V_CE
120
Ta=25˚C
100
80
IB=300µA
250µA
60
200µA
40
150µA
100µA
20
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
h_FE — I_C
600
VCE=10V
500
Ta=75˚C
400
25˚C
– 25˚C
300
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XN1509
I_C — V_BE
60
VCE=10V
50
25˚C
Ta=75˚C
– 25˚C
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
f_T — I_E
600
VCB=10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2