UNR32AN Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor For digital circuits

UNR32AN
P_T  T_a
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature T_a (°C)
h_FE  I_C
300
VCE = 10 V
250
Ta = 85°C
25°C
200
150
−25°C
100
50
0
1
10
100
Collector current I_C (mA)
V_IN  I_O
10
VO = 0.2 V
Ta = 25°C
I_C  V_CE
80
0.9 mA I_B = 1.0 mA
0.8 mA
70 0.7 mA
60
Ta = 25°C
0.6 mA
0.5 mA
0.4 mA
0.3 mA
50
0.2 mA
40
30
0.1 mA
20
10
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
1
I_C / I_B = 10
Ta = 85°C
0.1
−25°C
25°C
0.01
1
10
100
Collector current I_C (mA)
C_ob  V_CB
10
f = 1 MHz
Ta = 25°C
I_O  V_IN
100
VO = 5 V
Ta = 25°C
10
1
1
0
10
20
30
40
Collector-base voltage V_CB (V)
0.1
0 0.5 1.0 1.5 2.0 2.5
Input voltage V_IN (V)
1
0.1
0.1
1
10
100
Output current I_O (mA)
2
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