UNR32A6 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor

UNR32A6
P_T  T_a
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature T_a (°C)
h_FE  I_C
400
Ta = 85°C
VCE = 10 V
300
25°C
−25°C
200
100
0
1
10
100
Collector current I_C (mA)
V_IN  I_O
10 _{VO = 0.2 V}
Ta = 25°C
I_C  V_CE
90
Ta = 25°C
80
0.9 mA
70 ^{0.8 mA}
IB = 1.0 mA
60
50
40
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
30
0.1 mA
20
10
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
10
IC / IB = 10
Ta = 85°C
1
0.1
25°C
−25°C
0.01
1
10
100
1 000
Collector current I_C (mA)
C_ob  V_CB
10
f = 1 MHz
Ta = 25°C
I_O  V_IN
100
V_O = 5 V
Ta = 25°C
10
1
1
0
10
20
30
40
Collector-base voltage V_CB (V)
0.1
0 0.5 1.0 1.5 2.0 2.5
Input voltage V_IN (V)
1
0.1
1
10
100
Output current I_O (mA)
2
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