UNR32A4 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

UNR32A4
P_T  T_a
120
100
80
60
40
20
0
0
40
80
120
Ambient temperature T_a (°C)
h_FE  I_C
300
V_CE = 10 V
250
T_a = 85°C
25°C
200
−25°C
150
100
50
0
1
10
100
Collector current I_C (mA)
V_IN  I_O
10 _{VO = 0.2 V}
T_a = 25°C
I_C  V_CE
Ta = 25°C 0.9 mA
80
60
IB = 1.0 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
40
0.1 mA
20
0
0 2 4 6 8 10 12
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
10
1
0.1
Ta = 85°C
25°C
−25°C
0.01
0.1
IC / IB = 10
1
10
100
Collector current I_C (mA)
C_ob  V_CB
4
f = 1 MHz
Ta = 25°C
3
2
1
I_O  V_IN
100
V_O = 5 V
Ta = 25°C
10
1
0
0
10
20
30
40
Collector-base voltage V_CB (V)
0.1
0
1
2
Input voltage V_IN (V)
1
0.1
0.1
1
10
100
Output current I_O (mA)
2
SJH00063BED