English
Language : 

UN222 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – Transistor array to drive the small motor
UNA0222
■ Electrical Characteristics Ta = 25°C ± 3°C
• PNP
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−10
V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−10
V
Collector-base cutoff current (Emitter open) ICBO VCB = −6 V, IE = 0
−1
µA
Forward current transfer ratio
hFE VCE = −1 V, IC = − 0.5 A
200
700

Collector-emitter saturation voltage
VCE(sat) IC = −2 A, IB = −50 mA
− 0.45 V
Transition frequency
fT
VCB = −6 V, IE = 50 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −6 V, IE = 0, f = 1 MHz
70
pF
Forward voltage *1
Bias resistance *2
VF
IF = −1 A
REB
−1.5
V
−30% 10 +30% kΩ
• NPN
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
10
V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
10
V
Collector-base cutoff current (Emitter open) ICBO VCB = 6 V, IE = 0
1
µA
Forward current transfer ratio
hFE VCE = 1 V, IC = 0.5 A
200
700

Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 50 mA
0.25
V
Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 6 V, IE = 0, f = 1 MHz
50
pF
Forward voltage *1
Bias resistance *2
VF
IF = 1 A
REB
1.5
V
−30% 10 +30% kΩ
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Application to the built-in diode
*2: Application to the built-in resistance
2
SJK00046BED