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MA3X789 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA3X789
Schottky Barrier Diodes (SBD)
IF  VF
103
102
Ta = 125°C
75°C
25°C
10
1
10−1
10−2
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR  VR
104
Ta = 125°C
103
75°C
102
25°C
10
1
10−1
0
20 40 60 80 100 120
Reverse voltage VR (V)
1 000
300
100
IF(surge)  tW
Ta = 25°C
IF(surge)
tW
30
10
3
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Pulse width tW (ms)
Ct  VR
120
100
80
60
40
20
0
0 10 20 30 40 50 60
Reverse voltage VR (V)
2