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MA3J745D Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
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MA3J745D
Schottky Barrier Diodes (SBD)
IF  VF
103
102
Ta = 125°C
75°C 25°C
– 20°C
10
1
10−1
10−2
0
0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
VF  Ta
1.0
0.8
IF = 30 mA
0.6
10 mA
0.4
0.2
1 mA
0
−40 0
40
80 120 160
Ambient temperature Ta (°C)
IR  VR
104
Ta = 125°C
103
75°C
102
25°C
10
1
10−1
0
5 10 15 20 25 30
Reverse voltage VR (V)
Ct  VR
3.2
f = 1 MHz
Ta = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
IR  Ta
104
103
VR = 30 V
3V
1V
102
10
1
10−1
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
2