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MA3D760 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
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MA3D760
Schottky Barrier Diodes (SBD)
IF  VF
10
75°C 25°C
1
Ta = 125°C
−20°C
10−1
10−2
10−3
10−4
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR  Ta
104
VR = 90 V
30 V
103
10 V
102
10
1
10−1
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
IF(AV)  TC
8
7
t0
t1
6
5
t0 / t1 = 1/2
1/3
DC
4
1/6
3
2
1
0
20 40 60 80 100 120 140
Case temperature TC (°C)
VF  Ta
1.6
1.4
1.2
1.0
0.8
IF = 5 A
2.5 A
0.6
1A
0.4
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  VR
104
Ta = 125°C
103
75°C
102
25°C
10
1
10−1
0
20 40 60 80 100 120
Reverse voltage VR (V)
Ct  VR
400
f = 1 MHz
Ta = 25°C
300
PD(AV)  IF(AV)
20
t0
t1
15
200
100
0
0 20 40 60 80 100 120
Reverse voltage VR (V)
10
t0 / t1 = 1/6
1/3
1/2
5
DC
0
0123456
Average forward current IF(AV) (A)
2