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MA3D750 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
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MA3D750, MA3D750A
Schottky Barrier Diodes (SBD)
IF  VF
102
10
Ta = 125°C
1
75°C
25°C
10−1
−20°C
10−2
10−3
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
IR  VR
105
Ta = 125°C
104
103
75°C
25°C
102
10
1
0 10 20 30 40 50 60
Reverse voltage VR (V)
IF(AV)  TC
16
14
t0
t1
12
10
t0 / t1 = 1/2
1/3
DC
1/6
8
6
4
2
0
20 40 60 80 100 120 140
Case temperature TC (°C)
VF  Ta
1.6
1.4
1.2
1.0
0.8
IF = 10 A
0.6
5A
0.4
1A
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  Ta
105
VR = 45 V
104
20 V
10 V
103
102
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  VR
105
104
Ta = 125°C
103
75°C
25°C
102
10
1
0 10 20 30 40 50 60
Reverse voltage VR (V)
PD(AV)  IF(AV)
16
14
t0
t1
12
10
t0 / t1 = 1/6
8
1/3
1/2
6
DC
4
2
0
0 2 4 6 8 10 12
Average forward current IF(AV) (A)
2