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MA3D749 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)
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MA3D749, MA3D749A
Schottky Barrier Diodes (SBD)
10
Ta = 125°C
1
IF  VF
75°C 25°C
−20°C
10−1
10−2
10−3
10−4
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
VF  Ta
0.8
0.7
0.6
IF = 5 A
0.5
0.4
2.5 A
0.3
1A
0.2
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR  Ta
105
104
VR = 45 V
20 V
103
10 V
102
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
Ct  VR
800
f = 1 MHz
Ta = 25°C
700
600
500
400
300
200
100
0
0 10 20 30 40 50 60
Reverse voltage VR (V)
IF(AV)  TC
8
7
t0
t1
6
5
t0 / t1 = 1/2
1/3
DC
4
1/6
3
2
1
0
20 40 60 80 100 120 140
Case temperature TC (°C)
IR  VR
105
104
Ta = 125°C
103
75°C
102
25°C
10
1
0 10 20 30 40 50 60
Reverse voltage VR (V)
PD(AV)  IF(AV)
8
7
t0
t1
6
5
t0 / t1 = 1/6
4
1/3
1/2
3
DC
2
1
0
0123456
Average forward current IF(AV) (A)
2