MA2Z357 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

MA2Z357
Variable Capacitance Diodes
I_F  V_F
120
− 40°C
100
Ta = 60°C
25°C
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage V_F (V)
C_D  V_R
100
f = 1 MHz
Ta = 25°C
50
30
20
10
5
3
2
1
0 4 8 12 16 20 24 28 32 36 40
Reverse voltage V_R (V)
I_R  T_a
100
10
1
0.1
0.01
0
40
80
120
160
Ambient temperature T_a (°C)
C_D  T_a
1.03
f = 1 MHz
V_R = 2 V
1.02
10 V
1.01
17 V
25 V
1.00
0.99
0.98
0.97
0
20 40 60 80 100
Ambient temperature T_a (°C)
C_D rank classification
Primary rank classification
C_D(25V) (pF)
29.15 ^{9 8 7 6 5 4 3 2 1}
11
29.59
10
Note: Tracking guarantee range
(Capacitance deviation 2.0%)
30.03
9
30.48
8
30.94
7
31.40
6
31.87
5
32.35
4
32.84
3
33.33
2
33.83
1
34.13
Secondary rank classification
C_D(17V) (pF)
6.43 ^{14 13 12 11 10 9 8 7 6 5 4 3 2 1}
17
6.53
16
6.62
15
6.72
14
6.82
13
6.93
12
7.03
11
7.14
10
7.24
9
7.35
8
7.46
7
7.57
6
7.69
5
7.80
4
7.92
3
8.04
2
8.16
1
8.28
2