MA2S357 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

MA2S357
Variable Capacitance Diodes
C_D  V_R
100
f = 1 MHz
Ta = 25°C
50
30
20
10
5
3
2
1
0 4 8 12 16 20 24 28 32 36 40
Reverse voltage V_R (V)
I_R  T_a
100
V_R = 30 V
10
I_F  V_F
120
25°C
100
Ta = 60°C
80
60
− 40°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage V_F (V)
C_D  T_a
1.04
f = 1 MHz
1.03
V_R = 2 V
1.02
10 V
1.01
25 V
17 V
1.00
0.99
0.98
0
20 40 60 80 100
Ambient temperature T_a (°C)
1
0.1
0.01
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
2