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MA2P701 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)
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MA2P701, MA2P701A
Schottky Barrier Diodes (SBD)
Bias Application Unit N-50BU
Common characteristics charts
IF  VF
104
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr
tp
t
10%
Output Pulse
IF
trr
t
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
trr measuring instrument
103
Ta = 125°C
102
− 20°C
75°C
25°C
10
1
10−1
0
0.2 0.4 0.6 0.8 1.0
Forward voltage VF (V)
Characteristics charts of MA2P701
IR  VR
10
300
Ta = 125°C
1
75°C
200
10−1
Ct  VR
f = 1 MHz
Ta = 25°C
10−2
25°C
100
10−3
VF  Ta
0.8
0.7
0.6
0.5
0.4
IF = 1 A
0.3
0.2
50 mA
0.1
0
−40 0
40 80 120 160
Ambient temperature Ta ( C)
IR  Ta
10
VR = 20 V
10 V
1
10−1
10−2
10−4
0
5 10 15 20 25 30
Reverse voltage VR (V)
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
10−3
−40 0
40 80 120 160
Ambient temperature Ta (°C)
Characteristics charts of MA2P701A
IR  VR
10
300
Ta = 125°C
1
75°C
200
10−1
Ct  VR
f = 1 MHz
Ta = 25°C
10−2
25°C
100
10−3
10−4
0
10 20 30 40 50 60
Reverse voltage VR (V)
2
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
IR  Ta
10
VR = 40 V
20 V
1
10−1
10−2
10−3
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)