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DRC5114E0L Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type
DRC5114E
DRC5114E_PT-Ta
PT  Ta
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
DRC5114E_VCEsat-IC
VCE(sat)  IC
10
IC / IB = 20
1
0.1
Ta = 85°C
−30°C
25°C
0.01
0.1
1
10
100
Collector current IC (mA)
DRC5114E_IC-VCE
IC  VCE
120
Ta = 25°C
100
IB = 350 µA
300 µA
80
250 µA
60
200 µA
40
150 µA
20
100 µA
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
DRC5114E_IO-VIN
IO  VIN
10
VO = 5 V
Ta = 85°C
1
25°C
10−1
−30°C
10−2
10−3
0
0.5
1.0
1.5
2.0
Input voltage VIN (V)
DRC5114E_hFE-IC
500
VCE = 10 V
hFE  IC
400
Ta = 85°C
300
25°C
200
−30°C
100
0
0.1
1
10
100
Collector current IC (mA)
DRC5114E_VIN-IO
VIN  IO
100
VO = 0.2 V
10
25°C
1
−30°C
Ta = 85°C
0.1
0.1
1
10
100
Output current IO (mA)
Ver. DED
2