CNC1H001 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Optoisolator

CNC1H001
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
diode Reverse current
Capacitance
Output Collector-emitter dark current
transistor Collector-emitter voltage
Emitter-collector voltage
Collector capacitance
Coupled Current transfer ratio ^*1
V_F
I_R
C_t
I_CEO
V_CEO
V_ECO
C_C
CTR
Capacitance
Resistance
Rise time ^*2
Fall time ^*3
Saturation voltage
C_ISO
R_ISO
t_r
t_f
V_CE(sat)
I_F = 50 mA
V_R = 3 V
V_R = 0 V, f = 1 MHz
V_CE = 20 V
I_C = 100 µA
I_E = 10 µA
V_CE = 10 V, f = 1 MHz
V_CE = 5 V, I_F = 5 mA
f = 1 MHz
V_ISO = 500 V
V_CC = 10 V, I_C = 2 mA
R_L = 100 Ω
I_F = 20 mA, I_C = 1 mA
1.35 1.5 V
10 µA
15
pF
5 100 nA
80
V
7
V
10
pF
100
600 %
0.6
pF
10¹¹
Ω
4
µs
3
0.1 0.2 V
Note) *1: CTR = I_C / I_F × 100%
*2: Rise time is defined as the time required for the IC to rise from 10% to 90% of peak value.
*3: Fall time is defined as the time required for the IC to decrease from 90% to 10% of peak value.
Input and output are practiced by electricity.
The device is designed be disregarded radiation.
P_C , P_D  T_a
160
PC
120
80
PD
40
0
−20 0 20 40 60 80 100 120
Ambient temperature T_a (°C)
I_F  V_F
60
T_a = 25°C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage V_F (V)
10²
V_CC = 5 V
T_a = 25°C
I_C  I_F
10
1
10^−1
10^−2
10^−1
1
10
10²
Forward current I_F (mA)
2
SHF00006AED