CNB1011P Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Reflective photosensor

CNB1011
I_F , I_C  T_a
40
IF
30
IC
20
10
0
−25 0 20 40 60 80 100
Ambient temperature T_a (°C)
I_F  V_F
60
T_a = 25°C
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage V_F (V)
I_C  I_F
10⁴
VCE = 2 V
Ta = 25°C
RL = 100 Ω
d = 1 mm
10³
10²
10
10^−1
1
10
10²
Forward current I_F (mA)
V_F  T_a
1.6
1.4
1.2
IF = 10 mA
1.0
4 mA
1 mA
0.8
0.6
0.4
0.2
0
−40
0
40
80
Ambient temperature T_a (°C)
I_C  V_CE
10⁴
T_a = 25°C
I_F = 20 mA
10³
15 mA
10 mA
8 mA
6 mA
4 mA
10²
2 mA
10
1
0
2
4
6
8
Collector-emitter voltage V_CE (V)
∆I_C  T_a
160
VCC = 2 V
IF = 4 mA
RL = 100 Ω
120
80
40
0
−40
0
40
80
Ambient temperature T_a (°C)
I_CEO  T_a
10
V_CC = 20 V
1
10^−1
10^−2
10^−3
10^−4
10^−5
−20 0
20 40 60 80 100
Ambient temperature T_a (°C)
t_r , t_f  I_C
10³
V_CC = 2 V
Ta = 25°C
: tr
: tf
10²
RL = 2 kΩ
1 kΩ
10
100 Ω
1
10^−2
10^−1
1
10
Collector current I_C (mA)
∆I_C  d
VCC = 2 V
100
Ta = 25°C
IF = 4 mA
80
60
40
20
0
0 2 4 6 8 10 12
Distance d (mm)
2
SHG00056BED