2SK0662 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal)
P_D  Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_D  V_DS
8
Ta=25˚C
7
6
V_GS=0V
5
4
– 0.1V
3
– 0.2V
2
– 0.3V
1
– 0.4V
0
0 2 4 6 8 10 12
Drain to source voltage V_DS (V)
g_m  V_GS
20 _VDS=10V
Ta=25˚C
16
g_m  I_D
20
V_DS=10V
I_DSS=5mA ^Ta=25˚C
16
12
8
I_DSS=5mA
4
2mA
0
– 0.8 – 0.6 – 0.4 – 0.2
0
Gate to source voltage V_GS (V)
C_rss  V_DS
5
V_GS=3V
f=1MHz
Ta=25˚C
4
3
2
1
0
1
3
10
30
100
Drain to source voltage V_DS (V)
12
2mA
8
4
0
012345678
Drain current I_D (mA)
NF  f
12
V_DS=10V
ID=5.2mA
Ta=25˚C
10
8
6
R_g=500Ω
4
2
1kΩ
0
10
10²
10³
10⁴
10⁵
Frequency f (Hz)
2SK0662
I_D  V_GS
9.6
V_DS=10V
8.0
6.4
4.8
3.2
Ta=75˚C
1.6
25˚C
–25˚C
0
–1.0 – 0.8 – 0.6 – 0.4 – 0.2 0
Gate to source voltage V_GS (V)
C_iss, C_oss  V_DS
10
V_GS=–3V
f=1MHz
Ta=25˚C
8
6
C_iss
4
2
C_oss
0
1
3
10
30
100
Drain to source voltage V_DS (V)
252