2SD2276 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
200
150
(1)
100
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=3.5W)
50
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=1000
30
10
3
T_C=100˚C
25˚C
–25˚C
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
100
30
10
t_stg
3
t_on
1 t_f
t_on, t_stg, t_f — I_C
Pulsed t_w=1ms
Duty cycle=1%
I_C/I_B=1000 (I_B1=–I_B2)
V_CC=50V
T_C=25˚C
0.3
0.1
0.03
0.01
0
4
8
12
16
Collector current I_C (A)
I_C — V_CE
12
I_B=2mA
T_C=25˚C
10
1mA
0.9mA
8
0.8mA
0.7mA
6
0.6mA
0.5mA
4
0.4mA
0.3mA
2
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SD2276
V_BE(sat) — I_C
100
I_C/I_B=1000
30
10
3
T_C=–25˚C
1
100˚C
25˚C
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
100000
h_FE — I_C
30000
10000
3000
T_C=100˚C
1000
300 ^25˚C
100 –25˚C
V_CE=5V
30
10
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
Area of safe operation (ASO)
100
30
I_CP
10 ^IC
Non repetitive pulse
T_C=25˚C
10ms
t=1ms
3
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2