2SD2185 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
P_C — Ta
1.2
Printed circut board: Copper
foil area of 1cm² or more, and
1.0
the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=50
30
10
3
25˚C
1
Ta=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
C_ob — V_CB
60
I_E=0
f=1MHz
Ta=25˚C
50
40
30
20
10
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
120
Ta=25˚C
100
I_B=400µA
80
350µA
300µA
60
250µA
200µA
40
150µA
100µA
20
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SD2185
V_CE(sat) — I_C
10
I_C/I_B=50
3
1
Ta=75˚C
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
300
V_CE=2V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
f_T — I_E
240
V_CB=10V
Ta=25˚C
200
160
120
80
40
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
2