2SD2179 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
P_C — Ta
1.2
Printed circut board: Copper
foil area of 1cm² or more, and
1.0
the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=20
30
10
3
25˚C
1
Ta=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
C_ob — V_CB
240
I_E=0
f=1MHz
Ta=25˚C
200
160
120
80
40
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
2.4
Ta=25˚C
2.0
1.6
I_B=8mA
7mA
1.2
6mA
5mA
0.8
4mA
3mA
0.4
2mA
1mA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SD2179
V_CE(sat) — I_C
10
I_C/I_B=20
3
1
0.3
0.1
Ta=100˚C
25˚C
0.03
–25˚C
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
f_T — I_E
500
200
V_CE=2V
V_CB=10V
Ta=25˚C
400
160
Ta=100˚C
300
25˚C
120
–25˚C
200
80
100
40
0
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
2