2SD1742 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
P_C — Ta
20
(1) T_C=Ta
(2) Without heat sink
(P_C=1.3W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
I_C — V_CE
5
T_C=25˚C
4
I_B=100mA
90mA
80mA
3
70mA
60mA
50mA
40mA
2
30mA
20mA
1
10mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SD1742, 2SD1742A
I_C — V_BE
8
7
25˚C
6
T_C=100˚C ^{–25˚C}
5
V_CE=4V
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage V_BE (V)
V_CE(sat) — I_C
100
I_C/I_B=8
30
10
3
T_C=100˚C
25˚C
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
h_FE — I_C
V_CE=4V
300 T_C=100˚C
100
–25˚C
30
10
25˚C
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
f_T — I_C
V_CE=10V
f=10MHz
T_C=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation (ASO)
100
Non repetitive pulse
T_C=25˚C
30
10
I_CP
3
I_C
1
300ms
t=10ms
1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
R_th(t) — t
10³
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
10²
(1)
(2)
10
1
10^–1
10^–4
10^–3
10^–2
10^–1
1
10
10²
10³
10⁴
Time t (s)
2