2SD1051 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Transistor
P_C — Ta
1.2
Printed circut board: Copper
foil area of 1cm² or more, and
1.0
the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
25˚C
1
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
C_ob — V_CB
120
I_E=0
f=1MHz
Ta=25˚C
100
80
60
40
20
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
4.0
Ta=25˚C
3.5
I_B=40mA
3.0
35mA
30mA
2.5
25mA
2.0
20mA
15mA
1.5
10mA
1.0
5mA
0.5
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SD1051
V_CE(sat) — I_C
10
I_C/I_B=10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
300
V_CE=5V
250
200
Ta=75˚C
150
25˚C
–25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
V_CER — R_BE
60
Ta=25˚C
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Base to emitter resistance R_BE (kΩ)
f_T — I_E
240
V_CB=5V
Ta=25˚C
200
160
120
80
40
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Emitter current I_E (A)
1000
300
100
I_CBO — Ta
V_CB=20V
30
10
3
1
0
20 40 60 80 100
Ambient temperature Ta (˚C)
2