2SD1011 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type For low-frequency amplification

Transistor
P_C — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
100
I_C/I_B=10
30
10
3
1
0.3
25˚C _Ta=75˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
C_ob — V_CB
6
I_E=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
80
Ta=25˚C
70
60
I_B=100µA
80µA
60µA
50
50µA
40µA
40
30µA
30
20µA
20
10µA
10
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2000
1600
1200
800
h_FE — I_C
V_CE=10V
Ta=75˚C
25˚C
–25˚C
400
0
0.1 0.3 1 3 10 30 100
Collector current I_C (mA)
NV — I_C
100 _VCE=10V
G_V=80dB
Function=FLAT
80 ^Ta=25˚C
R_g=100kΩ
60
22kΩ
40
5kΩ
20
0
0.01 0.03
0.1
0.3
1
Collector current I_C (mA)
2SD1011
I_C — V_BE
60
25˚C
50
Ta=75˚C –25˚C
V_CE=10V
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to emitter voltage V_BE (V)
f_T — I_E
200
V_CB=10V
Ta=25˚C
160
120
80
40
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current I_E (mA)
NV — V_CE
100
R_g=100kΩ
80
60
22kΩ
40
5kΩ
20
I_C=1mA
G_V=80dB
Function=FLAT
0
Ta=25˚C
1
3
10
30
100
Collector to emitter voltage V_CE (V)
2