2SD0875 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – For Low-Frequency Power Amplification

2SD0875
P_C  T_a
1.4
Copper plate at the collector
is more than 1 cm² in area,
1.2
1.7 mm in thickness
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
I_C  V_CE
1.2
Ta = 25°C
1.0
IB = 10 mA
9 mA
8 mA
0.8
7 mA
6 mA
5 mA
0.6
4 mA
3 mA
0.4
2 mA
0.2
1 mA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
10
IC / IB = 10
1
Ta = 75°C
0.1
25°C
−25°C
0.01
0.001
1
10
100
1 000
Collector current I_C (mA)
V_BE(sat)  I_C
100
IC / IB = 10
10
25°C
1
Ta = −25°C
75°C
0.1
0.01
1
10
100
1 000
Collector current I_C (mA)
h_FE  I_C
300
V_CE = 10 V
250
T_a = 75°C
200
25°C
−25°C
150
100
50
0
1
10
100
1 000
Collector current I_C (mA)
f_T  I_E
200
VCB = 10 V
Ta = 25°C
160
120
80
40
0
−1
−10
−100
Emitter current I_E (mA)
C_ob  V_CB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1
10
100
Collector-base voltage V_CB (V)
Safe operation area
100
Single pulse
TC = 25°C
ICP
1
IC
t=1s
DC
10^−1
10^−2
10^−3
0.1
1
10
100
Collector-emitter voltage V_CE (V)
2
SJC00198CED