2SD0874A Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

2SD0874, 2SD0874A
P_C  T_a
1.4
Copper plate at the collector
is more than 1 cm² in area,
1.2
1.7 mm in thickness
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
I_C  V_CE
1.50
Ta = 25°C
1.25
IB = 10 mA
9 mA
8 mA
1.00
7 mA
6 mA
0.75
5 mA
4 mA
0.50
3 mA
2 mA
0.25
1 mA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_CE(sat)  I_C
10
IC / IB = 10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_BE(sat)  I_C
100
IC / IB = 10
10
25°C
1 ^{Ta = −25°C}
75°C
0.1
0.01
0.01
0.1
1
10
Collector current I_C (A)
h_FE  I_C
600
V_CE = 10 V
500
400
300
Ta = 75°C
200
25°C
−25°C
100
0
0.01
0.1
1
10
Collector current I_C (A)
200 _{VCB = 10 V}
Ta = 25°C
f_T  I_E
160
120
80
40
0
−1
−10
−100
Emitter current I_E (mA)
C_ob  V_CB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1
10
100
Collector-base voltage V_CB (V)
Safe operation area
10
Single pulse
TC = 25°C
ICP
1
IC
0.1
t=1s
DC
0.01
0.1
1
10
100
Collector-emitter voltage V_CE (V)
2
SJC00197CED