2SD0662 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – For High Breakdown Voltage General Amplification

2SD0662, 2SD0662B
P_C  T_a
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature T_a (°C)
I_C  V_CE
120
Ta = 25°C
100
1.8 mA
1.6 mA
IB = 2.0 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
80
60
0.6 mA
0.4 mA
40
0.2 mA
20
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
I_C  V_BE
120
VCE = 10 V
25°C
100
Ta = 75°C −25°C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage V_BE (V)
I_C  I_B
120
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base current I_B (mA)
V_CE(sat)  I_C
100
IC / IB = 10
10
1
Ta = 75°C
25°C
−25°C
0.1
0.01
0.01
0.1
1
10
Collector current I_C (mA)
I_B  V_BE
3.0
VCE = 10 V
Ta = 25°C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage V_BE (V)
h_FE  I_C
360
V_CE = 10 V
300
240
T_a = 75°C
180
25°C
120
−25°C
60
0
0.01
0.1
1
10
Collector current I_C (mA)
f_T  I_E
160
VCB = 10 V
Ta = 25°C
140
120
100
80
60
40
20
0
−1
−10
−100
Emitter current I_E (mA)
I_CBO  T_a
10⁴
V_CB = 250 V
10³
10²
10
1
0
40 80 120 160 200
Ambient temperature T_a (°C)
2
SJC00195BED