2SC5335 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
P_C — Ta
2.0
Printed circut board: Copper
foil area of 1cm² or more, and
1.6
the board thickness of 1.7mm
for the collector portion.
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
1
3 10 30 100 300 1000
Collector current I_C (mA)
I_C — V_CE
120
Ta=25˚C
I_B=100µA
100
90µA
80
80µA
70µA
60
60µA
50µA
40
40µA
30µA
20
20µA
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1800
1500
h_FE — I_C
V_CE=10V
1200
900
600
Ta=75˚C
25˚C
–25˚C
300
0
1 3 10 30 100 300 1000
Collector current I_C (mA)
2SC5335
V_CE(sat) — I_C
10
I_C/I_B=10
3
1
0.3
0.1
Ta=75˚C
0.03
25˚C
0.01
–25˚C
0.003
0.001
1
3 10 30 100 300 1000
Collector current I_C (mA)
C_ob — V_CB
24
f=1MHz
I_E=0
Ta=25˚C
20
16
12
8
4
0
1
3
10
30
100
Collector to base voltage V_CB (V)
2