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2SC5127 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Power Transistors
40
30
(1)
20
PC â Ta
(1) TC=Ta
(2) With a 100 Ã 100 Ã 2mm
Al heat sink
(3) With a 50 Ã 50 Ã 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
VBE(sat) â IC
100
IC/IB=5
30
10
3
TC=â25ËC
1
100ËC
25ËC
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
fT â IC
100
VCE=10V
f=1MHz
30
TC=25ËC
10
3
1
0.3
0.1
0.01 0.03
0.1
0.3
1
Collector current IC (A)
IC â VCE
1.2
TC=25ËC
IB=150mA
1.0
100mA
0.8
80mA
60mA
0.6
40mA
0.4
20mA
10mA
0.2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC5127/2SC5127A
VCE(sat) â IC
100
IC/IB=5
30
10
3
1
0.3
0.1
0.03
25ËC
TC=100ËC
â25ËC
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
hFE â IC
VCE=5V
30
10 25ËC
3
TC=100ËC
â25ËC
1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
Cob â VCB
IE=0
f=1MHz
TC=25ËC
30
10
3
1
1
3
10
30
100
Collector to base voltage VCB (V)
ton, tstg, tf â IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=3.5
(2IB1=âIB2)
10
VCC=200V
TC=25ËC
3
tstg
ton
1
0.3
tf
0.1
0.03
0.01
0
0.5
1.0
1.5
2.0
Collector current IC (A)
Area of safe operation (ASO)
10
Non repetitive pulse
TC=25ËC
3
t=0.5ms
1
1ms
0.3
10ms
0.1
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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