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2SC5035 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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Power Transistors
80
70
60
50
(1)
40
PC â Ta
(1) TC=Ta
(2) With a 100 Ã 100 Ã 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
VBE(sat) â IC
100
IC/IB=5
30
10
3
1
25ËC
TC=â25ËC
100ËC
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
10000
3000
1000
Cob â VCB
IE=0
f=1MHz
TC=25ËC
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC â VCE
8
TC=25ËC
7
6
IB=1200mA
1000mA
5
800mA
600mA
4
400mA
300mA
3
200mA
150mA
2
100mA
50mA
1
20mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
2SC5035
VCE(sat) â IC
100
IC/IB=5
30
10
3
25ËC
TC=100ËC
1
0.3
â25ËC
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
30
10
hFE â IC
VCE=5V
TC=100ËC
â25ËC
25ËC
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
fT â IC
VCE=10V
f=1MHz
TC=25ËC
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
ton, tstg, tf â IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=5
(IB1=âIB2)
10
VCC=250V
TC=25ËC
3
tstg
ton
1
0.3
tf
0.1
0.03
0.01
012345678
Collector current IC (A)
Area of safe operation (ASO)
10
ICP
3 IC
1
0.3
0.1
t=0.5ms
1ms
10ms
DC
0.03
0.01
Non repetitive pulse
0.003 TC=25ËC
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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