2SC4111 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
200
(1)
150
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
100
50
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=2.8
30
10
3
1
T_C=–25˚C
100˚C
0.3
25˚C
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
12
T_C=25˚C
10
I_B=2A
8
1A
6
0.7A
0.5A
4
0.2A
2
0.1A
0.05A
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
1000
300
100
h_FE — I_C
V_CE=5V
30
T_C=100˚C
25˚C
10
–25˚C
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation (ASO)
100
30 ^ICP
I_C
10
Non repetitive pulse
T_C=25˚C
t=1ms
10ms
3
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2SC4111
V_CE(sat) — I_C
100
I_C/I_B=2.8
30
10
3
T_C=100˚C
1
25˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
f_T — I_C
100
V_CE=10V
f=0.5MHz
30
T_C=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
Area of safe operation, horizontal operation ASO
40
35
30
25
I_CP
20
f=15.75kHz, T_C=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
15
10
5
<1mA
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage V_CE (V)
2