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2SC3975 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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Power Transistors
PC â Ta
120
(1) TC=Ta
(2) With a 100 Ã 100 Ã 2mm
100
Al heat sink
(1) (3) Without heat sink
(PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
VBE(sat) â IC
100
IC/IB=5
30
10
3
TC=â25ËC 25ËC
1
100ËC
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
10000
3000
1000
Cob â VCB
IE=0
f=1MHz
TC=25ËC
300
100
30
10
1
3
10
30
100
Collector to base voltage VCB (V)
IC â VCE
12
TC=25ËC
10
IB=100mA
8
50mA
40mA
6
30mA
20mA
4
10mA
2
5mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
hFE â IC
VCE=5V
100
TC=100ËC
30
25ËC
10
â25ËC
3
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
ton, tstg, tf â IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=5
(2IB1=âIB2)
10
VCC=200V
TC=25ËC
3
tstg
1
ton
0.3
tf
0.1
0.03
0.01
0
2 4 6 8 10 12 14 16
Collector current IC (A)
2SC3975
VCE(sat) â IC
100
IC/IB=5
30
10
TC=100ËC
3
25ËC
â25ËC
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (A)
fT â IC
100
VCE=10V
f=1MHz
30
TC=25ËC
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
100
30 ICP
IC
10
Non repetitive pulse
TC=25ËC
t=0.5ms
1ms
3
10ms
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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