2SC3973 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
60
50
(1)
40
30
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P_C=2W)
20
(2)
10
(4)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
1
T_C=–25˚C
25˚C
0.3
100˚C
0.1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
1000
300
100
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage V_CB (V)
I_C — V_CE
12
T_C=25˚C
10
8
I_B=1200mA
1000mA
6
800mA
600mA
400mA
4
300mA
200mA
2
100mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC3973, 2SC3973A
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
1
T_C=100˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
1000
300
100
h_FE — I_C
V_CE=5V
30
10
T_C=–25˚C
25˚C
3
100˚C
1
0.1 0.3 1 3 10 30 100
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=1MHz
T_C=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=200V
T_C=25˚C
3
t_stg
1
0.3
t_on
t_f
0.1
0.03
0.01
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Collector current I_C (A)
Area of safe operation (ASO)
100
30
I_CP
Non repetitive pulse
T_C=25˚C
10 I_C
t=0.5ms
1ms
3
10ms
1
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2