2SC3939 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Transistor
P_C — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_CE(sat) — I_C
10
I_C/I_B=10
3
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.003
0.001
1
3 10 30 100 300 1000
Collector current I_C (mA)
f_T — I_E
200
V_CB=10V
Ta=25˚C
160
120
80
40
0
–1
–3
–10
–30
–100
Emitter current I_E (mA)
I_C — V_CE
1.2
Ta=25˚C
1.0
I_B=10mA
9mA
8mA
0.8
7mA
6mA
5mA
0.6
4mA
3mA
0.4
2mA
0.2
1mA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
V_BE(sat) — I_C
100
I_C/I_B=10
30
10
3
25˚C
1
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
1
3 10 30 100 300 1000
Collector current I_C (mA)
C_ob — V_CB
50
I_E=0
f=1MHz
Ta=25˚C
40
30
20
10
0
1
3
10
30
100
Collector to base voltage V_CB (V)
2SC3939
I_C — I_B
1.2
V_CE=10V
Ta=25˚C
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
Base current I_B (mA)
h_FE — I_C
300
V_CE=10V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
1 3 10 30 100 300 1000
Collector current I_C (mA)
I_CBO — Ta
10⁴
V_CB=20V
10³
10²
10
1
0
60
120
180
Ambient temperature Ta (˚C)
2