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2SC3874 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Power Transistors
200
175
(1)
150
PC â Ta
(1) TC=Ta
(2) With a 100 Ã 100 Ã 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
125
100
75
50
25 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ËC)
VBE(sat) â IC
10
IC/IB=5
3
1
TC=â25ËC
0.3 25ËC
100ËC
0.1
0.03
0.01
0.1
0.3
1
3
10
Collector current IC (A)
10000
3000
1000
Cob â VCB
IE=0
f=1MHz
TC=25ËC
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC â VCE
20
IB=2A
TC=25ËC
16
1A
12
0.8A
0.6A
8
0.4A
0.3A
4
0.2A
0.1A
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
2SC3874
VCE(sat) â IC
10
IC/IB=5
3
1
TC=100ËC
25ËC
0.3
â25ËC
0.1
0.03
0.01
0.1
0.3
1
3
10
Collector current IC (A)
3000
1000
hFE â IC
VCE=5V
300
100
25ËC
TC=100ËC
30
â25ËC
10
3
1
0.1 0.3
1
3
10 30
Collector current IC (A)
1000
300
100
fT â IC
VCE=10V
f=1MHz
TC=25ËC
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
ton, tstg, tf â IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=5
(2IB1=âIB2)
10
VCC=150V
TC=25ËC
3
tstg
1
0.3
ton
0.1
tf
0.03
0.01
0
5
10 15 20 25
Collector current IC (A)
Area of safe operation (ASO)
100
30 ICP
10 IC
3
Non repetitive pulse
TC=25ËC
t=0.5ms
1ms
10ms
DC
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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