2SC3871 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
80
70
60
50 ₍₁₎
40
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
1 ^25˚C
0.3
–25˚C
0.1
T_C=100˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage V_CB (V)
I_C — V_CE
10
I_B=1000mA ^TC=25˚C
8
600mA
500mA
450mA
6
400mA
350mA
300mA
250mA
4
200mA
150mA
100mA
2
50mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V_CE (V)
2SC3871
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
1
25˚C
0.3
0.1 _{TC=–25˚C}
0.03
100˚C
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
h_FE — I_C
V_CE=5V
300
100
T_C=100˚C ^25˚C
30
–25˚C
10
3
1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=10MHz
T_C=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(2I_B1=–I_B2)
10
V_CC=150V
T_C=25˚C
3
t_stg
1
0.3
t_f
0.1
t_on
0.03
0.01
0
1
2
3
4
5
Collector current I_C (A)
Area of safe operation (ASO)
100
30 I_CP
10 ^IC
10ms
3
1
Non repetitive pulse
T_C=25˚C
t=0.5ms
1ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2