2SC3870 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
80
70
60
50
(1)
40
P_C — Ta
(1) T_C=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P_C=2.0W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
V_BE(sat) — I_C
100
I_C/I_B=5
30
10
3
25˚C
T_C=–25˚C
1
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
10000
3000
1000
C_ob — V_CB
I_E=0
f=1MHz
T_C=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage V_CB (V)
I_C — V_CE
5
T_C=25˚C
4
I_B=300mA
250mA
200mA
3
150mA
100mA
2
80mA
60mA
40mA
1
20mA
0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
2SC3870
V_CE(sat) — I_C
100
I_C/I_B=5
30
10
3
25˚C
1
0.3
T_C=100˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
h_FE — I_C
1000
300
100
T_C=100˚C
30
–25˚C
10
25˚C
V_CE=5V
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
1000
300
100
f_T — I_C
V_CE=10V
f=10MHz
T_C=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I_C (A)
t_on, t_stg, t_f — I_C
100
Pulsed t_w=1ms
Duty cycle=1%
30
I_C/I_B=5
(I_B1=–I_B2)
10
V_CC=150V
T_C=25˚C
3
t_stg
1
0.3
t_on
t_f
0.1
0.03
0.01
012345678
Collector current I_C (A)
Area of safe operation (ASO)
100
30
I_CP
10 I_C
3
Non repetitive pulse
T_C=25˚C
t=0.5ms
1ms
1
10ms
0.3
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V_CE (V)
2